Aug. 14, 2014 – Newbury Park, CA – Opto Diode (www.optodiode.com), a division of ITW, and a member of the ITW Photonics Group, introduces a new photodiode with a circular active area, the SXUV Ø2.5 mm. The new device provides excellent stability after extreme ultraviolet (EUV) conditions. It is housed in a TO-39, 3-pin, windowless package that delivers responsivity down to 1 nm. The active area is typically Ø2.5 mm and has a minimum shunt resistance (Rsh) of 20 MOhms @ ± 10 mV (typical). The new photodiode is well suited forhigh power laser monitoring at wavelengths 1nm – 200nm, or other tasks that require a highly-stable photodiode after EUV exposure.

The device parameters include reverse breakdown voltage of 20 Volts, with the capacitance of 1 nanofarads (nF). The response time is 1 nanosecond (typical) to a maximum of 2 nanoseconds.

Storage and operating temperatures range from -10 degrees C to 40 degrees C (ambient) and from -20 degrees C to 80 degrees C (in nitrogen or vacuum conditions). The lead soldering temperature (0.08 inches from the case for 10 seconds) is 260 degrees C; the maximum junction temperature is 70 degrees C.

To learn more about Opto Diode’s unique, highly stable SXUV Ø2.5 mm, or to view its photon responsivity graph on page 2 of the pdf, please go to: http://optodiode.com/pdf/SXUV5.pdf.