PITTSBURGH, March 12, 2018 (GLOBE NEWSWIRE) -- II‐VI Incorporated (NASDAQ:IIVI), a leading provider of high-power semiconductor laser components, today announced the introduction of its new edge emitting distributed feedback (DFB) laser diode for 3D sensing applications.
New applications in augmented and mixed reality are driving the rapidly growing demand for semiconductor lasers embedded in consumer devices, such as smartphones, headsets and smart glasses. II-VI’s new DFB laser diodes operate at 940 nm and emit powers of more than 500 mW enabling consumer devices to digitally reconstruct surrounding scenes in 3D using the reflected laser light.
“This latest product leverages the deep expertise that we accumulated over our 20 year legacy in gallium arsenide lasers,” said Karlheinz Gulden, General Manager, II-VI Laser Enterprise. “Our customers can rely on our global design and manufacturing teams that recently demonstrated our ability to rapidly scale production of a new laser for consumer electronics, to high volumes on a vertically integrated 6 inch gallium arsenide technology platform.”
II-VI’s DFB laser diodes can be customized to achieve the optimum output power for the application. Engineering sample quantities are currently available for evaluation and design-in, as assemblies on ceramic carriers or in die form.
II-VI’s broad portfolio of products for sensing includes vertical cavity surface emitting lasers (VCSELs) for proximity sensing and thumb navigation, and VCSEL arrays for 3D sensing. The product portfolio also includes low angle shift filters that select the reflected laser light over a wide field of view and reject other light to improve camera sensitivity.
II-VI at OFC, Mar. 13-15, 2018, Booth #2313
