Pulsed high-power laser diodes at 905 nm with AlGaAs structure

New World Record: Up to 650 Watts at 905 nm in a TO-18 Housing

Peak Performance of Pulsed Laser Diodes at 650 W

Pulsed high-power laser diodes at 905 nm with AlGaAs structure

Pulsed high-power laser diodes at 905 nm with AlGaAs structure

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15th April 2014

LASER COMPONENTS Canada has set a new world record with its pulsed laser diodes at 905 nm: peak power levels of up to 650 W emitted from a small TO-18 housing and are available on a standard basis.

These PLDs are based on “multi-junction” laser technology: This special laser technology contains several epitaxially integrated emitters with a total emitting area of 200 μm x 10 μm. At a pulse length of 150 ns, it is possible to achieve a peak performance of at least 70 W from a single chip. The metal housing allows a higher thermal load, which permits overdriving the diode and ultimately leads to the achievement of an output of up to 650 W from a stacked array design. Due to the combination of a small emitter area and an extremely high peak performance, the new 3J08 series is optimally suited for fiber coupling.

These pulsed laser diodes are used in low-level laser therapy, among other things. This is an alternative (veterinary) medical treatment that is carried out using monochromatic and coherent light. The goal of treatment is to reduce pain, accelerate the healing of wounds, and fight infections.

Further areas of application include rangefinding, speed guns, laser radar, security scanners, laser light curtains, and test and measurement systems.

More Information:

http://www.lasercomponents.com/de-en/supplier/laser-components-canada-inc/lightbox/

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